Advances in Chemical Mechanical Planarization (CMP) by Suryadevara Babu

By Suryadevara Babu

Advances in Chemical Mechanical Planarization (CMP) provides the newest details on a mainstream method that's severe for high-volume, high-yield semiconductor production, or even extra in order machine dimensions proceed to diminish. The know-how has grown to surround the removing and planarization of a number of steel and dielectric fabrics and layers either on the equipment and the metallization degrees, utilizing various instruments and parameters, requiring advancements within the keep an eye on of topography and defects.

This vital e-book bargains a scientific evaluation of basics and advances within the sector. half One covers CMP of dielectric and steel movies, with chapters concentrating on using specific recommendations and tactics, and on CMP of specific a variety of fabrics, together with extremely low-k fabrics and high-mobility channel fabrics, and finishing with a bankruptcy reviewing the environmental affects of CMP methods.

Part addresses consumables and strategy keep watch over for better CMP, and contains chapters at the guidance and characterization of slurry, diamond disc pad conditioning, using FTIR spectroscopy for characterization of floor tactics, and techniques for defection characterization, mitigation, and reduction.

  • Considers options and strategies for CMP of dielectric and steel films
  • Includes chapters dedicated to CMP for specific materials
  • Addresses consumables and method regulate for superior CMP

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Extra resources for Advances in Chemical Mechanical Planarization (CMP)

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The area in front of the abrasive particle will be under compressive stress and the area after abrasives have passed will be under tensile stress. 16). When an object is under normal stress and shear stress at the same time, the resultant stress field due to the inclined loading on a surface will show both compressive and tensile stresses. Because of the circular shape maximum shear stress in the tensile region from the side view, the round shape chatter-mark is created behind the point of contact body.

This indicates the material cannot be removed without abrasives since they activate the abrasion action in the oxide CMP. Previous literature also showed that the MRR is simply zero without abrasive particles inside the slurry [7]. 8 Illustration of preparation of chemical-less and abrasive-less polishing slurry [8]. 9 Material removal per sliding distance from mechanical polishing and chemical polishing [8]. removal cannot be made only by the chemical reaction between the dielectric surface and the chemicals in the polishing slurry.

6 Amount of material removal per sliding distance during CMP [8]. 6). By using the same test set-up shown previously, the amount of oxide removal per sliding distance was measured with different wafer velocity and downforce. The amount of oxide removal per sliding distance was at the maximum at the lower wafer velocity. As the wafer velocity increased, material removal per sliding distance decreased. This phenomenon can explain how material removal is made in different vertical positions of the wafer.

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