Advances in Power Electronics and Instrumentation by Tapan Mandal, Santanu Das (auth.), Vinu V Das, Nessy

By Tapan Mandal, Santanu Das (auth.), Vinu V Das, Nessy Thankachan, Narayan C. Debnath (eds.)

This ebook constitutes the refereed complaints of the second one overseas convention on Advances in energy Electronics and Instrumentation Engineering, PEIE 2011, held at Nagpur, India, in April 2011. The nine revised complete papers provided including four brief papers and seven poster papers have been rigorously reviewed and chosen from quite a few submissions. The papers tackle present concerns within the box of strength electronics, verbal exchange engineering, instrumentation engineering, electronic electronics, electricity engineering, electric machines, info expertise, keep watch over structures, and the like.

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Fine-grained Access Control to Web Databases. In: The Proceedings of the 12th ACM Symposium on Access Control Models and Technologies, pp. 31–40 (2007) 9. : A Formal Approach for Testing Security Rules. In: The Proceedings of the 12th ACM Symposium on Access Control Models and Technologies, pp. 127– 132 (2007) IMC Design Based Optimal Tuning of a PID-Filter Governor Controller for Hydro Power Plant Anil Naik Kanasottu, Srikanth Pullabhatla, and Venkata Reddy Mettu NIT Hamirpur, Hamirpur 177005, Himachal Pradesh, India Abstract.

1 Introduction SQL injection is a web application attack in which malicious code is inserted into strings that are passed to an instance of SQL Server for parsing and execution. Any procedure that builds SQL statements should be reviewed for injection vulnerabilities because SQL Server will execute all syntactically valid queries that it receives. Due this reason even parameterized data can be manipulated manually who is aware of the SQL injection code and by the determined attacker. The primary way of SQL injection consists of direct insertion of malicious code into user-input variables that are concatenated with SQL commands which are executed.

PEIE 2011, CCIS 148, pp. 43–49, 2011. © Springer-Verlag Berlin Heidelberg 2011 44 S. R. Kanjilal Fig. 1. S ∂ i 2 d V n g (V , E ) (1) Where L is the channel length and Vdeff the effective source-referenced drain voltage, and g(V,E) can be expressed as[4] g(V,E)=Wµ(x) Q(x) where Q is the is the mobile charge sheet density per unit area. Again gc(V,E) can be expressed as[4] gc(V,E) = g(V,E) (1+E/E0) (2) For the long channel device E0→∞. So we can write for a long channel device gc(V,E) = g(V,E).

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